Design and simulation of charge sensitive preamplifier with CMOS FET implemented as feedback capacitor Cfp

被引：0

作者：

WEMBE TAFO Evariste ^{[1
]}

机构：

[1] Institute of Modern Physics,Chinese Academy of Sciences

来源：

Nuclear Science and Techniques | 2008年 / 04期

关键词：

Charge sensitive preamplifier; CMOS transistor; Feedback capacitor; Simulation;

D O I：

暂无

中图分类号：

TN722.71 [];

学科分类号：

摘要：

In this paper,to design a new preamplifier for optimum performances with charged-particle or heavy-ion detectors,the CMOS FET is implemented as a feedback capacitor Cfp,so that the entire system should be built only with MOSFET. This work is a revolution design because to realize an ASIC for a preamplifier circuit,the capacitor will also be included. We succeed after a simulation to maintain a rise time less than 3 ns,the output resistance less than 94 ? and the linearity almost good.

引用

页码：241 / 245

页数：5

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