Design and simulation of charge sensitive preamplifier with CMOS FET implemented as feedback capacitor Cfp

被引：0
|
作者：
WEMBE TAFO Evariste [1 ]
机构：
[1] Institute of Modern Physics,Chinese Academy of Sciences
来源：
Nuclear Science and Techniques | 2008年 / 04期
关键词：
Charge sensitive preamplifier; CMOS transistor; Feedback capacitor; Simulation;
D O I：
暂无
中图分类号：
TN722.71 [];
学科分类号：
摘要：
In this paper,to design a new preamplifier for optimum performances with charged-particle or heavy-ion detectors,the CMOS FET is implemented as a feedback capacitor Cfp,so that the entire system should be built only with MOSFET. This work is a revolution design because to realize an ASIC for a preamplifier circuit,the capacitor will also be included. We succeed after a simulation to maintain a rise time less than 3 ns,the output resistance less than 94 ? and the linearity almost good.
引用
收藏
页码：241 / 245
页数：5
相关论文
共 50 条
  • [31] RADIATION-DAMAGE INVESTIGATION FOR THE DESIGN OF A HARDENED FAST BIPOLAR MONOLITHIC CHARGE SENSITIVE PREAMPLIFIER
    BASCHIROTTO, A
    CASTELLO, R
    GOLA, A
    PESSINA, G
    RANCOITA, PG
    RATTAGGI, M
    REDAELLI, M
    SEIDMAN, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1995, 362 (2-3): : 466 - 471
  • [32] A low-noise, wide-band CMOS charge-sensitive preamplifier for use with APD/LSO PET detectors
    Paulus, MJ
    Rochelle, JM
    Andreaco, MS
    Binkley, DM
    1995 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE RECORD, VOLS 1-3, 1996, : 330 - 334
  • [33] Low-noise, wide-band CMOS charge-sensitive preamplifier for use with APD/LSO PET detectors
    Paulus, MJ
    Rochelle, JM
    Andreaco, MS
    Binkley, DM
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (03) : 1666 - 1671
  • [34] An ultra-low noise cryogenic CMOS charge sensitive preamplifier for large volume point-contact HPGe detectors
    Deng, Z.
    He, L.
    Liu, F.
    Liu, Y.
    Li, Y.
    Yue, Q.
    JOURNAL OF INSTRUMENTATION, 2018, 13
  • [35] Simulation of High-Temperature Performance and Electronic Noise of SiC-JFET for Charge-Sensitive Preamplifier
    Zhang, Rui
    Chen, Size
    Han, Yuncheng
    Li, Taosheng
    Guo, Haomin
    Wang, Ying
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2023, 70 (11) : 2490 - 2498
  • [36] Design of low phase noise CMOS VCO using cross coupled topology with capacitor feedback
    Hsu, Meng-Ting
    Li, Wei-Jhih
    Hsu, Shuo-Chang
    MICROELECTRONICS JOURNAL, 2016, 54 : 32 - 39
  • [37] Design of an HV capacitor using the inherent advantage of charge simulation method and experimentations
    Devarajan, Harimurugan
    Punekar, Gururaj S.
    Kishore, Nudurupati Krishna
    IET SCIENCE MEASUREMENT & TECHNOLOGY, 2018, 12 (01) : 126 - 131
  • [38] Design and simulation of Gaussian shaping amplifier made only with CMOS FET for FEE of particle detector
    Wembe Tafo, Evariste
    Su Hong
    Qian Yi
    Kong Jie
    Wang Tongxi
    NUCLEAR SCIENCE AND TECHNIQUES, 2010, 21 (05) : 312 - 315
  • [39] Design and simulation of Gaussian shaping amplifier made only with CMOS FET for FEE of particle detector
    WEMBE TAFO Evariste
    NuclearScienceandTechniques, 2010, 21 (05) : 312 - 315
  • [40] Charge sensitive preamplifier design optimization for low-pressure Micro-Megas gaseous detector operations
    Avanzini, C.
    Balestri, G.
    Carosi, R.
    Dell'Orso, R.
    Frasconi, F.
    Magazzu, C.
    Massa, M.
    Moggi, A.
    Pilo, F.
    Terreni, G.
    Morsani, F.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2023, 1048
12345