Design and simulation of charge sensitive preamplifier with CMOS FET implemented as feedback capacitor Cfp

被引：0
|
作者：
WEMBE TAFO Evariste [1 ]
机构：
[1] Institute of Modern Physics,Chinese Academy of Sciences
来源：
Nuclear Science and Techniques | 2008年 / 04期
关键词：
Charge sensitive preamplifier; CMOS transistor; Feedback capacitor; Simulation;
D O I：
暂无
中图分类号：
TN722.71 [];
学科分类号：
摘要：
In this paper,to design a new preamplifier for optimum performances with charged-particle or heavy-ion detectors,the CMOS FET is implemented as a feedback capacitor Cfp,so that the entire system should be built only with MOSFET. This work is a revolution design because to realize an ASIC for a preamplifier circuit,the capacitor will also be included. We succeed after a simulation to maintain a rise time less than 3 ns,the output resistance less than 94 ? and the linearity almost good.
引用
收藏
页码：241 / 245
页数：5
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