Properties of Unsymmetrical Parabolic Confinement Potential Quantum Dot Qubit

被引:2
作者
CHEN ShiHua XIAO JingLin College of SciencesHuzhou Vocational Technology CollegeHuzhou China Department of PhysicsInner Mongolia University for NationalitiesTongliao China [1 ,2 ,313000 ,28043 ]
机构
关键词
quantum dot; qubit; binding energy;
D O I
暂无
中图分类号
O471.1 [半导体量子理论];
学科分类号
070205 ; 080501 ; 0809 ; 080903 ;
摘要
<正> On the condition of electric-LO phonon strong coupling in unsymmetrical parabolic confinement potentialquantum dot(QD),we obtain the eigenenergies of the ground state and the first-excited state,the eigenfunetions ofthe ground state,and the first-excited state by using variational method of Pekar type.This system in QD may beemployed as a two-level quantum system-qubit.When the electron is in the superposition state of the ground state andthe first-excited state,we obtain the time evolution of the electron density.The relations both the probability density ofelectron and the period of oscillation with the eleetron-LO-phonon coupling strength,the confinement strengths in thexy-plane and the z-direction are discussed.
引用
收藏
页码:1287 / 1289
页数:3
相关论文
共 9 条
[1]  
S.S.Li,X.G.Wu,,H.Z.Zheng. Physics . 2004
[2]  
A.Chatterjee. Physical Review B Condensed Matter and Materials Physics . 1990
[3]  
C.H.Bennett,D.P.DiVincenzo. Nature . 2000
[4]  
Swap action in a solid-state controllable anisotropic Heisenberg model. X.Hao,S.Zhu. Physics Letters A . 2008
[5]  
Angelakis,D. G.,Santos,M. F.,Yannopapas,V.,Ekert,A. Physics Letters A . 2007
[6]  
Quantum computing. Li S S,Long G L,Bai F S,et al. Proceedings of the National Academy of Sciences of the United States of America . 2001
[7]   CHEN [P]. 
CRAMER BERNDT ;
SCHUMANN BERND .
德国专利 :DE50015927D1 ,2010-07-01
[8]  
InAs∕GaAs single-electron quantum dot qubit. S. S. Li,J. B. Xia,J. L. Liu,F. H. Yang,Z. C. Niu,S. L. Feng,H. Z. Zheng. Journal of Applied Physics . 2001
[9]  
Conditional quantum dynamics and logic gates. Barenco A,Deutsch D,Ekert A,et al. Physical Review . 1995