Effect of three kinds of guanidinium salt on the properties of a novel low-abrasive alkaline slurry for barrier CMP

被引：1

作者：

陈国栋 ^{[1
]}

刘玉岭 ^{[1
]}

牛新环 ^{[1
]}

机构：

[1] Institute of Microelectronics,Hebei University of Technology

来源：

Journal of Semiconductors | 2014年 / 35卷 / 11期

关键词：

guanidinium; removal rate selectivity; electrochemical; CMP;

D O I：

暂无

中图分类号：

TN305.2 [表面处理];

学科分类号：

1401 ;

摘要：

The influence of three kinds of guanidinium salt on the removal rate selectivity of different materials was studied during the barrier chemical mechanical polishing(CMP) process at first.The three kinds of guanidine saltguanidine hydrochloride,guanidine nitrate and guanidine carbonate.Then we compared the effect of the three kinds of guanidine salt on the dishing,erosion and surface roughness value.In the end,the reaction mechanism was studied through electrochemical analysis.All the results indicate that there is a better performance of the slurry with guanidine hydrochloride than the slurries with the other two kinds of guanidine salt.It effectively improved the removal rate selectivity and the surface roughness under the premise of low abrasive concentration and low polishing pressure,which is good for the optimization of the alkaline slurry for the barrier CMP process.

引用

页码：183 / 187

页数：5

共 12 条

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