Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

被引：1

作者：

胡光喜 ^{[1
,2
]}

王伶俐 ^{[1
,2
]}

刘冉 ^{[1
,2
]}

汤庭鳌 ^{[1
,2
]}

仇志军 ^{[1
,2
]}

机构：

[1] ASIC & System State Key Lab,Platform of Micro/Nano-Electronics,Fudan University

[2] School of Microelectronics,Fudan University

来源：

CommunicationsinTheoreticalPhysics | 2010年 / 54卷 / 10期

基金：

美国国家科学基金会;

关键词：

simiconductor devices; quantum mechanical effects; effective electron mobility;

D O I：

暂无

中图分类号：

O413.1 [量子力学（波动力学、矩阵力学）]; TN32 [半导体三极管（晶体管）];

学科分类号：

070205 ; 0805 ; 080501 ; 080502 ; 0809 ; 080903 ;

摘要：

As the channel length of metal-oxide-semiconductor field-effect transistors (MOSFETs) scales into thenanometer regime, quantum mechanical effects are becoming more and more significant.In this work, a model for thesurrounding-gate (SG) nMOSFET is developed.The Schrdinger equation is solved analytically.Some of the solutionsare verified via results obtained from simulations.It is found that the percentage of the electrons with lighter conductivitymass increases as the silicon body radius decreases, or as the gate voltage reduces, or as the temperature decreases.Thecentroid of inversion-layer is driven away from the silicon-oxide interface towards the silicon body, therefore the carrierswill suffer less scattering from the interface and the electrons effective mobility of the SG nMOSFETs will be enhanced.

引用

页码：763 / 767

页数：5

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