Analysis of MPN, MHN and Phase Noise of a Two-Mode Semiconductor Laser

被引：0

作者：

Ebrahim Mortazy

Vahid Ahmadi

Mohammad Kazem Moravvej-Farshi

Abbas Zarifkar

机构：

[1] Department of Electronic Engineering

[2] Iran

[3] Iran Telecommunication Research Center (ITRC)

[4] P. O. Box 14115-143

[5] P. O. Box 14155-3961

[6] Tarbiat Modares University

[7] Tehran

来源：

光学学报 | 2003年 / S1期

关键词：

mode; in; RIN; MHN and Phase Noise of a Two-Mode Semiconductor Laser; Analysis of MPN; of;

D O I：

暂无

中图分类号：

O437 [非线性光学（强光与物质的作用）];

学科分类号：

070207 ; 0803 ;

摘要：

Intensity noise including Mode Partition Noise (MPN) and Mode Hopping Noise (MHN), and Phase/Frequency Noise Spectrum (FNS) are calculated for a two-mode semiconductor laser. RIN is derived considering of MPN and MHN effect.

引用

页码：473 / 474

页数：2