Development and characteristics analysis of recessed-gate MOS HEMT

被引：2
作者：
王冲
马晓华
冯倩
郝跃
张进城
毛维
机构：
[1] Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices
[2] School of Microelectronics
[3] Xidian University
来源：
半导体学报 | 2009年 / 30卷 / 05期
关键词：
high electron mobility transistors; AlGaN/GaN; recessed-gate; dielectric gate;
D O I：
暂无
中图分类号：
TN43 [半导体集成电路（固体电路）];
学科分类号：
080903 ; 1401 ;
摘要：
An AlGaN/GaN recessed-gate MOSHEMT was fabricated on a sapphire substrate.The device,which has a gate length of 1μm and a source-drain distance of 4μm,exhibits a maximum drain current density of 684mA/mm at Vgs=4V with an extrinsic transconductance of 219mS/mm.This is 24.3% higher than the transconductance of conventional AlGaN/GaN HEMTs.The cut-off frequency and the maximum frequency of oscillation are 9.2GHz and 14.1GHz,respectively.Furthermore,the gate leakage current is two orders of magnitude lower than for the conventional Schottky contact device.
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收藏
页码：32 / 35
页数：4
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