RamanScatteringModificationinMonolayerReS2ControlledbyStrainEngineering

被引:0
作者
李廷会 [1 ]
周子恒 [2 ]
郭俊宏 [3 ]
胡芳仁 [3 ]
机构
[1] College of Electronic Engineering,Guangxi Normal University
[2] Department of Physics,and National Laboratory of Solid State Microstructures,Nanjing University
[3] School of Optoelectronic Engineering and Gruenberg Research Centre,Nanjing University of Posts and Telecommunicates
关键词
by; on; is; mode; Raman Scattering Modification in Monolayer ReS2 Controlled by Strain Engineering; in; of;
D O I
暂无
中图分类号
TN304 [材料];
学科分类号
0805 ; 080501 ; 080502 ; 080903 ;
摘要
Regulation of optical properties and electronic structure of two-dimensional layered ReS2 materials has attracted much attention due to their potential in electronic devices.However,the identification of structure transformation of monolayer ReS2 induced by strain is greatly lacking.In this work,the Raman spectra of monolayer ReS2 with external strain are determined theoretically based on the density function theory.Due to the lower structural symmetry,deformation induced by external strain can only regulate the Raman mode intensity but cannot lead to Raman mode shifts.Our calculations suggest that structural deformation induced by external strain can be identified by Raman scattering.
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页码:93 / 96
页数:4
相关论文
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[1]  
Wildervanck J C,Jellinek F. Journal of the Less common Metals . 1971