A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

被引：0
|
作者：
杜睿 [1 ]
戴杨 [1 ]
陈燕凌 [1 ]
杨富华 [1 ]
机构：
[1] Research Center of Semiconductor Integration,Institute of Semiconductors,Chinese Academy of Sciences
来源：
半导体学报 | 2009年 / 03期
关键词：
VCO; E-HEMT; InP;
D O I：
暂无
中图分类号：
TN752 [振荡器];
学科分类号：
摘要：
A voltage-controlled ring oscillator(VCO) based on a full enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor(HEMT) logic is proposed.An enhancement-mode HEMT(E-HEMT) is fabricated,whose threshold is demonstrated to be 10 mV.The model of the E-HEMT is established and used in the SPICE simulation of the VCO.The result proves that the full E-HEMT logic technology can be applied to the VCO.And compared with the HEMT DCFL technology,the complexity of our fabrication process is reduced and the reliability is improved.
引用
收藏
页码：87 / 91
页数：5
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