Sn1-xGexTe的高温高压合成及热电性能

被引：2

作者：

周绪彪 ^{[1
]}

李尚升 ^{[1
]}

李洪涛 ^{[2
]}

宿太超 ^{[1
]}

杨曼曼 ^{[1
]}

杜景阳 ^{[1
]}

胡美华 ^{[1
]}

胡强 ^{[1
]}

机构：

[1] 河南理工大学材料科学与工程学院

[2] 中华人民共和国上海海关

来源：

高压物理学报 | 2022年 / 36卷 / 01期

关键词：

热电材料; 高压; SnTe;

D O I：

暂无

中图分类号：

TB34 [功能材料];

学科分类号：

080501 ;

摘要：

在众多热电材料中,SnTe具有与PbTe相同的晶体结构且不含重金属Pb,近年来引起了人们的广泛关注。目前,本征SnTe的热电性能并不特别优异,存在以下问题:大量本征Sn空位导致载流子浓度过高,从而降低了电输运性能;价带中的轻带与重带能量劈裂较大,且带隙过窄,不利于通过重带参与电运输提高Seebeck系数;晶格热导率较大。利用高温高压方法快速合成了Ge掺杂的SnTe合金,系统研究了不同Ge含量对SnTe的微观结构和热电性能的影响。结果表明:Ge掺杂能够有效地调控SnTe材料的电运输性能;Ge掺杂使样品的微观结构发生变化,样品晶粒细化,且析出纳米第二相,晶界和纳米相对声子的散射作用降低了热导率;样品Ge0.2Sn0.8Te在700 K时的热电优值达到0.35。

引用

页码：31 / 36

页数：6

共 29 条

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