Epitaxy surface effect on the first-order phase transition properties in a ferroelectric thin film

被引:0
作者
卢兆信 [1 ]
滕保华 [1 ]
杨新 [1 ]
戎永辉 [1 ]
张怀武 [2 ]
机构
[1] School of Physical Electronics,University of Electronic Science and Technology of China
[2] School of Microelectronics and Solid State Electronics,University of Electronic Science and Technology of China
关键词
ferroelectric thin film; phase diagram;
D O I
暂无
中图分类号
O484.4 [薄膜的性质];
学科分类号
080501 ; 1406 ;
摘要
By modifying the interchange interactions and the transverse fields on the epitaxy surface layer,this paper studies the phase transition properties of an n-layer ferroelectric thin film by the Fermi-type Green's function technique based on the transverse Ising model with a four-spin interaction.The special attention is given to the effect of the epitaxy surface layer on the first-order phase transition properties in the parameter space constructed by the ratios of the bulk transverse field and the bulk four-spin interaction to the bulk two-spin interaction with the framework of the higher-order decoupling approximation to the Fermi-type Green's function.The results show that the first-order phase transition properties will be changed significantly due to the modification of interchange interaction and transverse field parameters on the epitaxy surface layer.The dependence of the first-order phase transition properties on the thickness of ferroelectric thin films is also discussed.
引用
收藏
页码:508 / 513
页数:6
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