Epitaxy surface effect on the first-order phase transition properties in a ferroelectric thin film

被引：0

作者：

卢兆信 ^{[1
]}

滕保华 ^{[1
]}

杨新 ^{[1
]}

戎永辉 ^{[1
]}

张怀武 ^{[2
]}

机构：

[1] School of Physical Electronics,University of Electronic Science and Technology of China

[2] School of Microelectronics and Solid State Electronics,University of Electronic Science and Technology of China

来源：

Chinese Physics B | 2010年 / 12期

关键词：

ferroelectric thin film; phase diagram;

D O I：

暂无

中图分类号：

O484.4 [薄膜的性质];

学科分类号：

080501 ; 1406 ;

摘要：

By modifying the interchange interactions and the transverse fields on the epitaxy surface layer,this paper studies the phase transition properties of an n-layer ferroelectric thin film by the Fermi-type Green's function technique based on the transverse Ising model with a four-spin interaction.The special attention is given to the effect of the epitaxy surface layer on the first-order phase transition properties in the parameter space constructed by the ratios of the bulk transverse field and the bulk four-spin interaction to the bulk two-spin interaction with the framework of the higher-order decoupling approximation to the Fermi-type Green's function.The results show that the first-order phase transition properties will be changed significantly due to the modification of interchange interaction and transverse field parameters on the epitaxy surface layer.The dependence of the first-order phase transition properties on the thickness of ferroelectric thin films is also discussed.

引用

页码：508 / 513

页数：6

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