Influence of Target Temperature on Cemented Carbides for Dual Ion Implantation

被引：0

作者：

赵青 ^{[1
]}

李宏福 ^{[1
]}

童洪辉 ^{[2
]}

机构：

[1] School of Physical Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China

[2] Southwestern Institute of Physics,Chengdu 610041,China

来源：

Plasma Science and Technology | 2006年 / 06期

关键词：

cemented carbide; Ta+N ion implantation; temperature;

D O I：

暂无

中图分类号：

O539 [等离子体物理的应用];

学科分类号：

070204 ;

摘要：

A Cemented Carbide material was implanted with dual nitrogen plus tantalum ionsat temperatures of 100℃ and 400℃ and a dose of 8×10;ions cm;.The thickness of the im-planted layers increased by about an order of magnitude when the temperature was elevated from100℃ to 400℃.Higher surface hardness was also obtained in the high temperature implanta-tion.X-ray diffraction showed the presence of nitrides of tantalum and tungsten in the implantedsurface.

引用

页码：690 / 692

页数：3

共 10 条

[1]

Zhao Q,Tong H H,Chen Q Q,et al. Nuclear Fusion and Plasma Physics . 2000

[2]

Hutchings R,Collins G A,Tendys J. Surface and Coatings Technology . 1992

[3] VACUUM [P].

GATODOMONORI ;

NISHIKORIDAMAKI ;

HAYAKAWAHIROSHI ;

OHARANAOYUKI ;

ITOGOITSI ;

ODATSIDORU ;

HAYASHISEIJO .

韩国专利 :KR20000011440A ,2000-02-25

[4]

Xie L,Worzala F J,Conrad J R,et al. Journal of Materials Science . 1991

[5]

Dearnaley G. Physics Research B . 1990

[6]

Shang Z K,Chen K Q,Zeng X C,et al. Surface and Coatings Technology . 1996

[7]

Sadhna Shrivastava,Ram D. Surface and Coatings Technology . 1991

[8]

Fayeulle S,Treheux D,Esnouf C. Nucl.Instrum.Methods B . 1985

[9]

Blawert C,Mordike Bol,Collins G A. Surface and Coatings Technology . 1998

[10]

Zhao Q,Tong H H,Chen Q Q,et al. The Technology of the Fine Process . 2000

← 1 →