Analysis of the thermo-optic effect in lateral-carrier-injection SOI ridge waveguide devices

被引：1

作者：

赵佳特 ^{[1
]}

赵勇 ^{[1
]}

王皖君 ^{[1
]}

郝寅雷 ^{[1
]}

周强 ^{[1
]}

杨建义 ^{[1
]}

王明华 ^{[1
]}

江晓清 ^{[1
]}

机构：

[1] Department of Information Science and Electronic Engineering Zhejiang University

来源：

半导体学报 | 2010年 / 06期

基金：

中国国家自然科学基金;

关键词：

plasma dispersion effect; SOI waveguide device; thermo-optic effect; silicon photonics;

D O I：

暂无

中图分类号：

TN814 [波导、波导管、波导传输线];

学科分类号：

0810 ; 081001 ;

摘要：

The thermo-optic effect in the lateral-carrier-injection pin junction SOI ridge waveguide is analyzed according to the thermal field equation.Numerical analysis and experimental results show that the thermo-optic effect caused by carrier injection is significant in such devices,especially for small structure ones.For a device with a 1000μm modulation length,the refractive index rise introduced by heat accounts for 1/8 of the total effect under normal working conditions.A proposal of adjusting the electrode position to cool the devices to diminish the thermal-optic effect is put forward.

引用

页码：60 / 64

页数：5