CMOS-compatible all-optical modulator based on the saturable absorption of graphene

被引:0
|
作者
HONG WANG [1 ]
NINGNING YANG [1 ]
LIMIN CHANG [2 ]
CHAOBIAO ZHOU [1 ]
SHIYU LI [1 ]
MENG DENG [1 ]
ZHENWEI LI [1 ]
QIANG LIU [1 ]
CHI ZHANG [1 ]
ZHIYONG LI [2 ]
YI WANG [1 ]
机构
[1] Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
[2] Institute of Semiconductors, Chinese Academy of Sciences
基金
中国国家自然科学基金;
关键词
Graphene; CMOS-compatible all-optical modulator based on the saturable absorption of graphene;
D O I
暂无
中图分类号
O613.7 [第Ⅳ族非金属元素(碳和硅)及其化合物]; TN761 [调制技术与调制器];
学科分类号
070301 ; 080902 ; 081704 ;
摘要
Graphene resting on a silicon-on-insulator platform offers great potential for optoelectronic devices.In the paper,we demonstrate all-optical modulation on the graphene-silicon hybrid waveguides (GSHWs) with tens of micrometers in length.Owing to strong interaction between graphene and silicon strip waveguides with compact light confinement,the modulation depth reaches 22.7%with a saturation threshold down to 1.38 pJ per pulse and a 30-μm-long graphene pad.A response time of 1.65 ps is verified by a pump-probe measurement with an energy consumption of 2.1 pJ.The complementary metal-oxide semiconductor compatible GSHWs with the strip configuration exhibit great potential for ultrafast and broadband all-optical modulation,indicating that employing two-dimensional materials has become a complementary technology to promote the silicon photonic platform.
引用
收藏
页码:468 / 474
页数:7
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