共 50 条
- [21] Compensation defects in annealed undoped liquid encapsulated Czochralski InP J Appl Phys, 2 (951-955):
- [22] A DEEP LEVEL TRANSIENT SPECTROSCOPY COMPARISON OF ION-BEAM SPUTTER DEPOSITION DEFECTS IN HIGH AND LOW-TEMPERATURE ANNEALED N-SI SUBSTRATES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03): : 853 - 856
- [24] Temperature dependence of the width of the deep-level band in silicon with a high concentration of defects Semiconductors, 2002, 36 : 1326 - 1331