Photoluminescence Spectra of Post-heat-treated Porous Silicon

被引：0
|
作者：
LIU Xiao bing
机构：
来源：
Semiconductor Photonics and Technology | 2002年 / 04期
关键词：
Heat treatment; Blue shift; Stability; Photoluminescence;
D O I：
暂无
中图分类号：
TN304 [材料];
学科分类号：
摘要：
Porous silicon prepared by pulse electro etching is heat treated in O 2 atmosphere with an enhancement of its PL peak and an improvement of its PL stability. The PL peak of a sample porous silicon treated in O 2 atmosphere at 1 000 ℃ presents itself a three-peak structure and, compared with an un- heat-treated sample, there exists blue shift of ～ 40 nm.
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页码：234 / 237
页数：4
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