Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC Wafers

被引：0

作者：

Xianglong Yang ^{[1
]}

Kun Yang ^{[1
]}

Yingxin Cui ^{[1
]}

Yan Peng ^{[1
]}

Xiufang Chen ^{[1
]}

Xuejian Xie ^{[1
]}

Xiaobo Hu ^{[1
]}

机构：

[1] State Key Laboratory of Crystal Materials, Shandong University

来源：

ActaMetallurgicaSinica(EnglishLetters) | 2014年 / 27卷 / 06期

关键词：

SiC; Anomalous resistivity; Polytype inclusion; Activation energy; Compensation mechanism;

D O I：

暂无

中图分类号：

TN304.2 [化合物半导体];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

The resistivities of vanadium-doped semi-insulating 4H-SiC wafers were measured by a contactless resistivity measurement system. Anomalous resistivity was found in semi-insulating 4H-SiC wafer. Raman spectra of semi-insulating4H-SiC wafer indicated that the anomalous resistivity was caused by polytype inclusion. Based on the activation energies of different SiC polytypes calculated from resistivity versus temperature data measured by COREMA-VT, the resistivities in the vanadium-doped semi-insulating 4H-SiC wafer with 6H polytype inclusion were calculated. The calculated resistivities are quite consistent with the measured resistivities. Furthermore, the compensation mechanism for the formation of anomalous resistivity was proposed.

引用

页码：1083 / 1087

页数：5

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