Design of mm-wave amplifiers based on over & under neutralization techniques

被引：0
作者：
Di LI
Lei ZHANG
Li ZHANG
Yan WANG
Zhiping YU
机构：
[1] InstituteofMicroelectronics,TsinghuaUniversity
来源：
ScienceChina(InformationSciences) | 2018年 / 61卷 / 06期
关键词：
LNA; Design of mm-wave amplifiers based on over; under neutralization techniques;
D O I：
暂无
中图分类号：
TN722 [放大器];
学科分类号：
080902 ;
摘要：
<正>Dear editor,Recently high-speed wireless communications in60 GHz unlicensed band become increasingly attractive for both academia and industry[1–5].Millimeter wave amplifiers are believed difficult in complimentary metal oxide semiconduc-
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收藏
页码：256 / 258
页数：3
相关论文
共 5 条
[1]  
A millimeterwave CMOS low noise amplifier using transformer neutralization techniques. Mineyama A,Kawano Y,Sato M,et al. Proceedings of Asia-Pacific Microwave Conference (APMC) . 2011
[2]  
A 22.3 dB Voltage Gain 6.1 dB NF 60 GHz LNA in 65 nm CMOS with Differential Output. Christopher Weyers,Pierre Mayr,Johannes W. Kunze,Ulrich Langmann. IEEE Solid-State Circuits Conference . 2008
[3]  
A 60 GHz digitallyassisted power amplifier with 17.2 d Bm Psat 11.3%PAE in 65 nm CMOS. Liang Y,Li N,Wei F,et al. Proceedings of IEEE International Microwave Symposium (IMS) . 2015
[4]  
A 60GHz 1V +12.3dBm Transformer-Coupled Wideband PA in 90nm CMOS. Debopriyo Chowdhury,Patrick Reynaert,Ali M. Niknejad. 2008 IEEE International Solid-State Circuits Conference(ISSCC 2008 ) . 2008
[5]  
88 d B NF 60 GHz CMOS UWB LNA with small group-delay-variation. Lee J H,Lin Y S. IEEE Electronics Letters . 2013
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