Ordered porous metal oxide semiconductors for gas sensing

被引：0
作者：
Xinran Zhou [1 ]
Xiaowei Cheng [1 ]
Yongheng Zhu [1 ,2 ]
Ahmed A.Elzatahry [3 ,4 ]
Abdulaziz Alghamdi [5 ]
Yonghui Deng [1 ,6 ]
Dongyuan Zhao [1 ]
机构：
[1] Department of Chemistry, State Key Laboratory of Molecular Engineering of Polymers,Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, iChEM, Fudan University
[2] Department of Chemistry, College of Science, King Saud University
[3] College of Food Science and Technology, Shanghai Ocean University
[4] Center for Advanced Materials, Qatar University
[5] Materials Science and Technology Program, College of Arts and Sciences, Qatar University
[6] State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences
来源：
Chinese Chemical Letters | 2018年 / 29卷 / 03期
基金：
中国博士后科学基金; 中国国家自然科学基金;
关键词：
Porous materials; Metal oxides; Templating-synthesis; Gas sensing;
D O I：
暂无
中图分类号：
O611.62 [氧化物、过氧化物];
学科分类号：
070301 ; 081704 ;
摘要：
Among various gas sensing materials, metal oxide semiconductors have shown great potential as resistive type sensors. The ordered porous structural metal oxide semiconductors with well-defined meso-or macro-pores chemically synthesized via soft-templating method and nanocasting strategy have high porosity, highly interconnected pore channels and high surface area with enormous active sites for interacting with gaseous molecules. These features enable them good performance in gas sensing,including high sensitivity, fast response and recovery, good selectivity. This review gives a comprehensive summary about the porous metal oxides with focus on the synthesis methods, structure related properties, as well as the modification strategies for gas sensing improved performances.
引用
收藏
页码：405 / 416
页数：12
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