Charged Centers in ZnS- type Thin Film Electroluminescent Devices

Charged centers exist in the phosphor layer of the common thin film electroluminescent devices. In this article, electron scattering process due to these centers is studied through phase shift analysis. The scattering rates in different cases are obtained and compared with other important scattering processes. Electron transport processed under different charged centers conditions are simulated by means of Monte Carlo method. The quantitative results about the influence of charged centers on electron energy are obtained.