Electronic properties of SnTe-class topological crystalline insulator materials

被引：0

作者：

王建峰 ^{[1
]}

王娜 ^{[1
]}

黄华卿 ^{[1
]}

段文晖 ^{[1
,2
,3
]}

机构：

[1] Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University

[2] Institute for Advanced Study, Tsinghua University

[3] Collaborative Innovation Center of Quantum Matter, Tsinghua University

来源：

Chinese Physics B | 2016年 / 11期

基金：

中国国家自然科学基金;

关键词：

topological crystalline insulator; SnTe; surface states; mirror symmetry;

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The rise of topological insulators in recent years has broken new ground both in the conceptual cognition of condensed matter physics and the promising revolution of the electronic devices.It also stimulates the explorations of more topological states of matter.Topological crystalline insulator is a new topological phase,which combines the electronic topology and crystal symmetry together.In this article,we review the recent progress in the studies of SnTe-class topological crystalline insulator materials.Starting from the topological identifications in the aspects of the bulk topology,surface states calculations,and experimental observations,we present the electronic properties of topological crystalline insulators under various perturbations,including native defect,chemical doping,strain,and thickness-dependent confinement effects,and then discuss their unique quantum transport properties,such as valley-selective filtering and helicity-resolved functionalities for Dirac fermions.The rich properties and high tunability make SnTe-class materials promising candidates for novel quantum devices.

引用

页码：97 / 110

页数：14