Direct modulation characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots

被引：0

作者：

N.V.KRYZHANOVSKAYA ^{[1
]}

E.I.MOISEEV ^{[1
]}

F.I.ZUBOV ^{[1
]}

A.M.MOZHAROV ^{[1
]}

M.V.MAXIMOV ^{[1
]}

N.A.KALYUZHNYY ^{[2
]}

S.A.MINTAIROV ^{[2
]}

M.M.KULAGINA ^{[2
]}

S.A.BLOKHIN ^{[2
]}

K.E.KUDRYAVTSEV ^{[3
]}

A.N.YABLONSKIY ^{[3
]}

S.V.MOROZOV ^{[3
]}

YU.BERDNIKOV ^{[4
]}

S.ROUVIMOV ^{[5
]}

A.E.ZHUKOV ^{[1
]}

机构：

[1] St.Petersburg Academic University

[2] Ioffe Institute of RAS

[3] Institute for Physics of Microstuctures of RAS

[4] ITMO University

[5] University of Notre Dame

来源：

Photonics Research | 2019年 / 06期

基金：

俄罗斯科学基金会;

关键词：

QDs; Direct modulation characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots; InGaAs;

D O I：

暂无

中图分类号：

TN248 [激光器];

学科分类号：

0803 ; 080401 ; 080901 ;

摘要：

GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands（InGaAs quantum well-dots） were studied using direct small-signal modulation. We demonstrate that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth for microdisk lasers. A maximum 3 dB modulation frequency of 5.9 GHz was found in the microdisk with a radius of 13.5 μm operating without a heatsink for cooling. A modulation current efficiency factor of 1.5 GHz∕mA;was estimated.

引用

页码：664 / 668

页数：5

共 10 条

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