MULTISTEP FINITE VOLUME APPROXIMATIONS TO THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE ON GENERAL 2D OR 3D MESHES

被引：0
|
作者：
Min Yang (School of Mathematics and Information Science
机构：
来源：
Journal of Computational Mathematics | 2007年 / 04期
基金：
中国国家自然科学基金;
关键词：
Semiconductor device; Unstructured meshes; Finite volume; Multistep method; Error estimates;
D O I：
暂无
中图分类号：
O241 [数值分析];
学科分类号：
070102 ;
摘要：
In this paper, we consider a hydrodynamic model of the semiconductor device. The approximate solutions are obtained by a mixed finite volume method for the potential equation and multistep upwind finite volume methods for the concentration equations. Error estimates in some discrete norms are derived under some regularity assumptions on the exact solutions.
引用
收藏
页码：485 / 496
页数：12
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