Homogeneous interface-type resistance switching in Au/La0.67Ca0.33MnO3/SrTiO3/F:SnO2 heterojunction memories

被引：0

作者：

张婷 ^{[1
]}

丁玲红 ^{[1
]}

张伟风 ^{[1
]}

机构：

[1] Key Laboratory of Photovoltaic Materials of Henan Province, School of Physics and Electronics, He’nan University, Kaifeng 475004, China

来源：

Chinese Physics B | 2012年 / 21卷 / 04期

基金：

中国国家自然科学基金;

关键词：

La0.67Ca0.33MnO3 thin films; resistance switching; impedance spectroscopy; metal-oxide interface;

D O I：

暂无

中图分类号：

O484.1 [薄膜的生长、结构和外延];

学科分类号：

080501 ; 1406 ;

摘要：

La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunctions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 × 10 4 % by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.

引用

页码：471 / 476

页数：6