Semiconductor–metal transition in GaAs nanowires under high pressure

被引：0

作者：

梁艺蓝 ^{[1
]}

姚震 ^{[1
]}

殷雪彤 ^{[1
]}

王鹏 ^{[1
]}

李利霞 ^{[2
]}

潘东 ^{[2
]}

李海燕 ^{[1
]}

李全军 ^{[1
]}

刘冰冰 ^{[1
]}

赵建华 ^{[2
]}

机构：

[1] State Key Laboratory of Superhard Materials, Jilin University

[2] State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences

来源：

Chinese Physics B | 2019年 / 07期

关键词：

GaAs nanowires; high pressure; structural transition; x-ray diffraction;

D O I：

暂无

中图分类号：

TN304.2 [化合物半导体];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

We investigate the structural phase transitions and electronic properties of GaAs nanowires under high pressure by using synchrotron x-ray diffraction and infrared reflectance spectroscopy methods up to 26.2 GPa at room temperature.The zinc-blende to orthorhombic phase transition was observed at around 20.0 GPa.In the same pressure range, pressureinduced metallization of GaAs nanowires was confirmed by infrared reflectance spectra.The metallization originates from the zinc-blende to orthorhombic phase transition.Decompression results demonstrated that the phase transition from zincblende to orthorhombic and the pressure-induced metallization are reversible.Compared to bulk materials, GaAs nanowires show larger bulk modulus and enhanced transition pressure due to the size effects and high surface energy.

引用

页码：406 / 410

页数：5