Progress in rectifying-based RRAM passive crossbar array

被引:0
作者
ZHANG KangWeiLONG ShiBingLIU QiL HangBingLI YingTaoWANG Yan LIAN WenTaiWANG MingZHANG Sen LIU Ming Laboratory of NanoFabrication and Novel Devices Integrated TechnologyInstitute of Microelectronics Chinese Academy of SciencesBeijing China [100029 ]
机构
关键词
rectification; passive crossbar array; RRAM; 1D1R; self-rectifying;
D O I
暂无
中图分类号
TP333 [存贮器];
学科分类号
081201 ;
摘要
Resistive random access memory(RRAM) with crossbar structure is receiving widespread attentions due to its simple structure,high density,and feasibility of three-dimensional(3D) stack.It is an extremely promising solution for high density storage.However,a major issue of crosstalk restricts its development and application.In this paper,we will first introduce the integration methods of RRAM device and the existing crosstalk phenomenon in passive crossbar array,and then focus on the 1D1R(one diode and one resistor) structure and self-rectifying 1R(one resistor) structure which can restrain crosstalk and avoid misreading for the passive crossbar array.The test methods of crossbar array are also presented to evaluate the performances of passive crossbar array to achieve its commercial application in comparison with the active array consisting of one transistor and one RRAM cell(1T1R) structure.Finally,the future research direction of rectifying-based RRAM passive crossbar array is discussed.
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页码:811 / 818
页数:8
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