A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress

被引：0

作者：

岳远征 ^{[1
]}

郝跃 ^{[1
]}

张进城 ^{[1
]}

冯倩 ^{[1
]}

倪金玉 ^{[1
]}

马晓华 ^{[1
]}

机构：

[1] Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University

来源：

Chinese Physics B | 2008年 / 17卷 / 04期

关键词：

AlGaN/GaN MOS-HEMT; Al2O3; passivation;

D O I：

暂无

中图分类号：

TN386.1 [金属-氧化物-半导体（MOS）器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

This paper studies systematically the drain current collapse in AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) by applying pulsed stress to the device.Low-temperature layer of A1 2 O 3 ultrathin film used as both gate dielectric and surface passivation layer was deposited by atomic layer deposition (ALD).For HEMT,gate turn-on pulses induced large current collapse.However,for MOS-HEMT,no significant current collapse was found in the gate turn-on pulsing mode with different pulse widths,indicating the good passivation effect of ALD A1 2 O 3.A small increase in I d in the drain pulsing mode is due to the relieving of self-heating effect.The comparison of synchronously dynamic pulsed I d V ds characteristics of HEMT and MOS-HEMT further demonstrated the good passivation effect of ALD A1 2 O 3.

引用

页码：1405 / 1409

页数：5