A 220 GHz dynamic frequency divider in 0.5μm InP DHBT technology

被引：1

作者：

Wei Cheng

Youtao Zhang

Yuan Wang

Bin Niu

Haiyan Lu

Long Chang

Junling Xie

机构：

[1] ScienceandTechnologyonMonolithicIntegratedCircuitsandModulesLaboratory,NanjingElectronicDevicesInstitute

来源：

Journal of Semiconductors | 2017年 / 38卷 / 05期

关键词：

InP; heterojunction bipolar transistor; dynamic frequency divider;

D O I：

暂无

中图分类号：

TN772 [分频器];

学科分类号：

080902 ;

摘要：

A high performance 3 inch 0.5 μm InP DHBT technology with three interconnecting layers has been developed.The epitaxial layer structure and geometry parameters of the device were carefully studied to get the required performances.The 0.5 × 5 μm2 InP DHBTs demonstrated f_t = 350 GHz,fmax = 532 GHz and BVCEO = 4.8 V,which were modeled using Agilent-IIBT large signal model.As a benchmark circuit,a dynamic frequency divider operating from 110 to 220 GHz has been designed,fabricated and measured with this technology.The ultra-high-speed 0.5 μm InP DHBT technology offers a combination of ultra-high-speed and high breakdown voltage,which makes it an ideal candidate for next generation 100 GHz+ mixed signal integrated circuits.

引用

页码：86 / 91

页数：6

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