Temperature-dependent dielectric properties of Au/Si3N4/n-Si (metal insulator semiconductor) structures

被引：0

作者：

T.Ataseven ^{[1
]}

A.Tataroglu ^{[1
]}

机构：

[1] Physics Department, Faculty of Sciences, Gazi University, Teknikokullar

来源：

Chinese Physics B | 2013年 / 22卷 / 11期

关键词：

Au/Si3N4/n-Si(metal–insulator–semiconductor) structure; admittance measurements; dielectric properties; ac conductivity;

D O I：

暂无

中图分类号：

TN304 [材料];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

The dielectric properties of Au/Si3N4/n-Si(MIS)structures are studied using the admittance measurements(C–V and G/ω–V)each as a function of temperature in a range from 80 K to 400 K for two frequencies(100 kHz and 1 MHz).Experimental results show that both the dielectric constant(ε)and the dielectric loss(ε)increase with temperature increasing and decrease with frequency increasing.The measurements also show that the ac conductivity(σac)increases with temperature and frequency increasing.The lnσacversus 1000/T plot shows two linear regions with different slopes which correspond to low(120 K–240 K)and high(280 K–400 K)temperature ranges for the two frequencies.It is found that activation energy increases with frequency and temperature increasing.

引用

页码：545 / 550

页数：6

共 20 条

[1]

On the Voltage and Frequency Distribution of Dielectric Properties and ac Electrical Conductivity in Al/SiO2/p-Si (MOS) Capacitors[J] . Ahmet Kaya,?emsettin,Alt?ndal,Yasemin ?afak Asar,Zekayi S?nmez.Chinese Physics Letters . 2013 (1)

[2]

Methyl orange (C.I. acid orange 52) as a new organic semiconductor: Conduction mechanism and dielectrical relaxation[J] . I.S. Yahia,M.S. Abd El-sadek,F. Yakuphanoglu.Dyes and Pigments . 2011 (1)

[3]

Temperature dependence of electronic parameters of organic Schottky diode based on fluorescein sodium salt[J] . I.S. Yahia,A.A.M. Farag,F. Yakuphanoglu,W.A. Farooq.Synthetic Metals . 2011 (9)

[4]

Impedance spectroscopy properties of polypyrrole doped with boric acid[J] . F. Yakuphanoglu,I.S. Yahia,B.F. Senkal,G.B. Sakr,W.A. Farooq.Synthetic Metals . 2011 (9)

[5]

Dielectric permittivity, ac conductivity and phase transition in hydroxyl ammonium sulfate[J] . M M Abdel Kader,M Y Elzayat,T R Hammad,A I Aboud,H Abdelmonem.Physica Scripta . 2011 (3)

[6]

Dielectric relaxation, conductivity behavior and magnetic properties of Mg substituted Zn–Li ferrites[J] . Navneet Singh,Ashish Agarwal,Sujata Sanghi.Current Applied Physics . 2010 (3)

[7]

AC and dielectric properties of vacuum evaporated InTe bilayer thin films[J] . P. Matheswaran,R. Sathyamoorthy,R. Saravanakumar,S. Velumani.Materials Science & Engineering B . 2010 (1)

[8]

Frequency and temperature dependence of dielectric and electrical properties of radio-frequency sputtered lead-free K 0.48 Na 0.52 NbO 3 thin films[J] . Jin Soo Kim,Hai Joon Lee,Sun Young Lee,Ill Won Kim,Su Dae Lee.Thin Solid Films . 2010 (22)

[9] Doping-induced modulation of electrical and optical properties of silicon nitride [J].

Karazhanov, S. Zh. ;

Kroll, P. ;

Marstein, E. S. ;

Holt, A. .

THIN SOLID FILMS, 2010, 518 (17) :4918-4922

[10]

Dispersive conductivity and dielectric behavior in niobium based NASICON glasses and analysis using anomalous diffusion model[J] . S. Vinoth Rathan,G. Govindaraj.Solid State Ionics . 2010 (11)

← 1 2 →