Development of solar-blind AlGaN 128x128 Ultraviolet Focal Plane Arrays

被引：0
作者：
YUAN YongGang1
2 Institute of Semiconductors
机构：
来源：
Science in China(Series E:Technological Sciences) | 2008年 / 06期
关键词：
AlGaN; photodiode; ultraviolet FPA; solar-blind;
D O I：
暂无
中图分类号：
TM914.4 [太阳能电池];
学科分类号：
080502 ;
摘要：
This paper reports the development of solar-blind aluminum gallium nitride (AlGaN) 128×128 UV Focal Plane Arrays (FPAs). The back-illuminated hybrid FPA archi- tecture consists of an 128x128 back-illuminated AlGaN PIN detector array that is bump-mounted to a matching 128x128 silicon CMOS readout integrated circuit (ROIC) chip. The 128×128 p-i-n photodiode arrays with cuton and cutoff wave-lengths of 233 and 258 nm, with a sharp reduction in response to UVB (280―320 nm) light. Several examples of solar-blind images are provided. This solar-blind band FPA has much better application prospect.
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页码：820 / 826
页数：7
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