A low-voltage and energy-efficient full adder cell based on carbon nanotube technology

被引：0

作者：

Keivan Navi ^{[1
]}

Rabe’e Sharifi Rad ^{[1
]}

Mohammad Hossein Moaiyeri ^{[1
]}

Amir Momeni ^{[1
]}

机构：

[1] Faculty of Electrical and Computer Engineering, Shahid Beheshti University,GC

来源：

Nano-Micro Letters | 2010年 / 02期

关键词：

CNFET; Low-Voltage; Full-Adder; Minority-Function; Nanotechnology;

D O I：

暂无

中图分类号：

TN386 [场效应器件]; TB383.1 [];

学科分类号：

070205 ; 0805 ; 080501 ; 080502 ; 080903 ; 1406 ;

摘要：

Scaling problems and limitations of conventional silicon transistors have led the designers to exploit novel nano-technologies. One of the most promising and feasible nano-technologies is CNT(Carbon Nanotube) based transistors. In this paper, a high-speed and energy-efficient CNFET(Carbon Nanotube Field Effect Transistor) based Full Adder cell is proposed for nanotechnology. This design is simulated in various supply voltages, frequencies and load capacitors using HSPICE circuit simulator. Significant improvement is achieved in terms of speed and PDP(Power-Delay-Product) in comparison with other classical and state-of-the-art CMOS and CNFET-based designs, existing in the literature. The proposed Full Adder can also drive large load capacitance and works properly in low supply voltages.

引用

页码：114 / 120

页数：7