W-band GaN MMIC PA with 257 mW output power at 86.5 GHz

被引:1
作者
徐鹏
宋旭波
吕元杰
王元刚
敦少博
尹甲运
房玉龙
顾国栋
冯志红
蔡树军
机构
[1] NationalKeyLaboratoryofApplicationSpecificIntegratedCircuit(ASIC),HebeiSemiconductorResearchInstitute
关键词
W-band; MMIC; GaN; power amplifier;
D O I
暂无
中图分类号
TN722.75 [];
学科分类号
080902 ;
摘要
A three-stage W-band GaN monolithic microwave integrated circuit power amplifier(MMIC PA) is reported.In order to manage coupling effects between all the parts of the W-band MMIC,all matching and bias networks have been first optimized using circuit simulating software and then systematically simulated on 3D full-wave electromagnetic simulator.The fabricated MMIC PA achieves a 257 mW output power at 86.5 GHz in continuous-wave mode,with an associated power added efficiency of 5.4%and an associated power gain of 6.1 dB.The power density is 459 mW/mm.Moreover,the MMIC PA offers over 100 mW in the 83-90 GHz bandwidth.Those performances were measured at drain bias of 12 V.
引用
收藏
页码:175 / 177
页数:3
相关论文
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