THE DOPING EFFECT OF BORON ON GLOW DISCHARGE a-Si:H FILMS

被引：0
|
作者：
吴汝麟
何宇亮
沈宗雍
机构：
[1] Nanjing University
[2] Institute of Solid State Physics
来源：
A Monthly Journal of Science | 1984年 / 09期
关键词：
THE DOPING EFFECT OF BORON ON GLOW DISCHARGE a-Si; Si;
D O I：
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学科分类号：
摘要：
We have studied the doping properties of boron in a-Si:H films prepared with glow discharge technique.In this paper we will explain our work in the following three sections.
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页码：1166 / 1169
页数：4
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