Magnetic coupling governed pinning directions in magnetic tunnel junctions under magnetic field annealing with zero magnetic field cooling

被引:0
作者
Weibin CHEN [1 ]
Shaohua YAN [2 ]
Zhiqiang CAO [2 ]
Shiyang LU [2 ]
Xiaonan ZHAO [1 ]
Runrun HAO [2 ]
Zitong ZHOU [2 ]
Zhi LI [2 ]
Kun ZHANG [2 ]
Shishen YAN [1 ]
Qunwen LENG [1 ,2 ]
机构
[1] School of Physics, State Key Laboratory of Crystal Materials, Shandong University
[2] Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University
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D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
<正>With the rapid development of emerging concepts, such as the Internet of things and big data, the use of various magnetoresistance(MR) sensors, especially tunneling MR(TMR) in magnetic tunnel junctions(MTJs), for information perception is considered the critical first step. A typical topic in this field is the construction of a Wheatstone bridge structure to restrain the temperature drift and amplify the magnetic response signal.
引用
收藏
页码:305 / 306
页数:2
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