The properties of transparent conducting molybdenum-doped ZnO films grown by radio frequency magnetron sputtering

被引:0
作者
修显武 [1 ]
赵文静 [2 ]
机构
[1] School of Physics and Electronics,Shandong Normal University
[2] Jinan No Vocational School
关键词
molybdenum oxide; zinc oxide; magnetron sputtering; transparent conducting oxides;
D O I
暂无
中图分类号
O484.1 [薄膜的生长、结构和外延];
学科分类号
080501 ; 1406 ;
摘要
Transparent conducting molybdenum-doped zinc oxide films are prepared by radio frequency(RF) magnetron sputtering at ambient temperature.The MoO3 content in the target varies from 0 to 5 wt%,and each film is polycrystalline with a hexagonal structure and a preferred orientation along the c axis.The resistivity first decreases and then increases with the increase in MoO3 content.The lowest resistivity achieved is 9.2 × 10-4.cm,with a high Hall mobility of 30 cm2.V-1.s-1 and a carrier concentration of 2.3×1020 cm-3 at an MoO3 content of 2 wt%.The average transmittance in the visible range is reduced from 91% to 80% with the increase in the MoO3 content in the target.
引用
收藏
页码:413 / 416
页数:4
相关论文
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Effect of film thickness on the properties of indium tin oxide thin films .2 H. Kim,J.S. Horwitz,G. Kushto,A. Pique,Z. H. Kafafi,C. M. Gilmore,D.B. Chrisey. Journal of Applied Physics . 2000
[2]  
Burstein,E. Phys. Rev . 1954