The enhanced low dose rate sensitivity of a linear voltage regulator with different biases

被引:6
作者
王义元 [1 ,2 ,3 ]
陆妩 [1 ,2 ]
任迪远 [1 ,2 ]
郭旗 [1 ,2 ]
余学峰 [1 ,2 ]
高博 [1 ,2 ,3 ]
机构
[1] Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences
[2] Xinjiang Key Laboratory of Electronic Information Materials and Devices
[3] Graduate University of the Chinese Academy of Sciences
关键词
linear voltage regulator; ELDRS; bias dependence;
D O I
暂无
中图分类号
TM44 [稳定器];
学科分类号
080801 ;
摘要
A linear voltage regulator was irradiated by;Coγat high and low dose rates with two bias conditions to investigate the dose rate effect.The devices exhibit enhanced low dose rate sensitivity(ELDRS) under both biases. Comparing the enhancement factors between zero and working biases,it was found that the ELDRS is more severe under zero bias conditions.This confirms that the ELDRS is related to the low electric field in a bipolar structure. The reasons for the change in the line regulation and the maximum drive current were analyzed by combining the principle of linear voltage regulator with irradiation response of the transistors and error amplifier in the regulator. This may be helpful for designing radiation hardened devices.
引用
收藏
页码:71 / 74
页数:4
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    [J]. 核技术, 2010, 33 (05) : 357 - 361
  • [2] Annealing behavior of radiation damage in JFET-input operational amplifiers
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    [J]. 半导体学报, 2009, 30 (05) : 60 - 64
  • [3] CMOS运算放大器的电子和60COγ辐照效应及退火特性
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    余学锋
    张国强
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    [J]. 固体电子学研究与进展, 1998, (03) : 323 - 328
  • [4] Total dose effects in conventional bipolar transistor and linear integrated circuits .2 Johnston A H,Swift G M,Rax B Get al. IEEE Trans Nucl Sci . 1994