The enhanced low dose rate sensitivity of a linear voltage regulator with different biases
被引:6
作者:
王义元
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Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences
Xinjiang Key Laboratory of Electronic Information Materials and Devices
Graduate University of the Chinese Academy of SciencesXinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences
王义元
[1
,2
,3
]
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陆妩
[1
,2
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任迪远
[1
,2
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郭旗
[1
,2
]
余学峰
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机构:
Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences
Xinjiang Key Laboratory of Electronic Information Materials and DevicesXinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences
余学峰
[1
,2
]
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高博
[1
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,3
]
机构:
[1] Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences
[2] Xinjiang Key Laboratory of Electronic Information Materials and Devices
[3] Graduate University of the Chinese Academy of Sciences
A linear voltage regulator was irradiated by;Coγat high and low dose rates with two bias conditions to investigate the dose rate effect.The devices exhibit enhanced low dose rate sensitivity(ELDRS) under both biases. Comparing the enhancement factors between zero and working biases,it was found that the ELDRS is more severe under zero bias conditions.This confirms that the ELDRS is related to the low electric field in a bipolar structure. The reasons for the change in the line regulation and the maximum drive current were analyzed by combining the principle of linear voltage regulator with irradiation response of the transistors and error amplifier in the regulator. This may be helpful for designing radiation hardened devices.
机构:
Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of SciencesXinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences
陆妩
任迪远
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机构:
Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of SciencesXinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences
任迪远
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王义元
郭旗
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Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of SciencesXinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences
[4]
Total dose effects in conventional bipolar transistor and linear integrated circuits .2 Johnston A H,Swift G M,Rax B Get al. IEEE Trans Nucl Sci . 1994
机构:
Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of SciencesXinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences
陆妩
任迪远
论文数: 0引用数: 0
h-index: 0
机构:
Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of SciencesXinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences
任迪远
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机构:
王义元
郭旗
论文数: 0引用数: 0
h-index: 0
机构:
Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of SciencesXinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences
[4]
Total dose effects in conventional bipolar transistor and linear integrated circuits .2 Johnston A H,Swift G M,Rax B Get al. IEEE Trans Nucl Sci . 1994