Electronic and thermoelectric properties of Mg2GexSn-1-x(x=0.25,0.50,0.75) solid solutions by first-principles calculations

被引:1
|
作者
李开跃 [1 ]
鲁勇 [1 ]
黄艳 [1 ]
邵晓红 [1 ]
机构
[1] College of Science,Beijing University of Chemical Technology
基金
中国国家自然科学基金;
关键词
solid solution; electronic structure; thermoelectric transport property;
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The electronic structure and thermoelectric(TE) properties of Mg2GexSn1-x(x = 0.25, 0.50, 0.75) solid solutions are investigated by first-principles calculations and semi-classical Boltzmann theory. The special quasi-random structure(SQS) is used to model the solid solutions, which can produce reasonable band gaps with respect to experimental results.The n-type solid solutions have an excellent thermoelectric performance with maximum zT values exceeding 2.0, where the combination of low lattice thermal conductivity and high power factor(PF) plays an important role. These values are higher than those of pure Mg2Sn and Mg2Ge. The p-type solid solutions are inferior to the n-type ones, mainly due to the much lower PF. The maximum zT value of 0.62 is predicted for p-type Mg2Ge0.25Sn0.75at 800K. The results suggest that the n-type Mg2GexSn1-xsolid solutions are promising mid-temperature TE materials.
引用
收藏
页码:280 / 287
页数:8
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