Fast Electrical Detection of Carcinoembryonic Antigen Based on AlGaN/GaN High Electron Mobility Transistor Aptasensor

被引：0

作者：

占香蜜 ^{[1
]}

王权 ^{[1
]}

王琨 ^{[1
]}

李巍 ^{[1
]}

肖红领 ^{[1
,2
,3
]}

冯春 ^{[1
,3
]}

姜丽娟 ^{[1
,3
]}

王翠梅 ^{[1
,2
,3
]}

王晓亮 ^{[1
,2
,3
]}

王占国 ^{[1
,3
]}

机构：

[1] Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences

[2] School of Microelectronics,University of Chinese Academy of Sciences

[3] Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices

来源：

Chinese Physics Letters | 2017年 / 09期

基金：

中国国家自然科学基金;

关键词：

CEA; GaN; Fast Electrical Detection of Carcinoembryonic Antigen Based on AlGaN/GaN High Electron Mobility Transistor Aptasensor;

D O I：

暂无

中图分类号：

R730.4 [肿瘤诊断学]; TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ; 100214 ;

摘要：

As one of the most important tumor-associated antigens of colorectal adenocarcinoma, the carcinoembryonic antigen（CEA） threatens human health seriously all over the globe. Fast electrical and highly sensitive detection of the CEA with AlGaN/GaN high electron mobility transistor is demonstrated experimentally. To achieve a low detection limit, the Au-gated sensing area of the sensor is functionalized with a CEA aptamer instead of the corresponding antibody. The proposed aptasensor has successfully detected different concentrations(ranging from 50 picogram/milliliter（pg/ml） to 50 nanogram/milliliter（ng/ml）) of CEA and achieved a detection limit as low as 50 pg/ml at V;= 0.5 V. The drain-source current shows a clear increase of 11.5μA under this bias.

引用

页码：93 / 96

页数：4

共 50 条

[1] Fast Electrical Detection of Carcinoembryonic Antigen Based on AlGaN/GaN High Electron Mobility Transistor Aptasensor
占香蜜
王权
王琨
李巍
肖红领
冯春
姜丽娟
王翠梅
王晓亮
王占国
Chinese Physics Letters, 2017, 34 (09) : 93 - 96
[2] Fast Electrical Detection of Carcinoembryonic Antigen Based on AlGaN/GaN High Electron Mobility Transistor Aptasensor
Zhan, Xiang-Mi
Wang, Quan
Wang, Kun
Li, Wei
Xiao, Hong-Ling
Feng, Chun
Jiang, Li-Juan
Wang, Cui-Mei
Wang, Xiao-Liang
Wang, Zhan-Guo
CHINESE PHYSICS LETTERS, 2017, 34 (09)
[3] Biological detection by high electron mobility transistor (HEMT) based AlGaN/GaN
Zeggai, Oussama
Ould-Abbas, Amaria
Bouchaour, Mama
Zeggai, Hichem
Sahouane, Nordine
Madani, Malika
Trari, Djamel
Boukais, Meriem
Chabane-Sari, N. -E.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, 2014, 11 (02): : 274 - 279
[4] A highly sensitive sensor for carcinoembryonic antigen based on AlGaN/GaN high-electron-mobility transistors
Huang, WeiSun
Hu, Shengjie
Jiang, Xuecheng
Weng, Yuyan
Liu, Yu
Tang, Xue
Yang, Guofeng
Wang, Xun
Lu, Naiyan
NANOTECHNOLOGY, 2023, 34 (31)
[5] Fast electrical detection of Hg(II) ions with AlGaN/GaN high electron mobility transistors
Wang, Hung-Ta
Kang, B. S.
Chancellor, T. F., Jr.
Lele, T. P.
Tseng, Y.
Ren, F.
Pearton, S. J.
Johnson, W. J.
Rajagopal, P.
Roberts, J. C.
Piner, E. L.
Linthicum, K. J.
APPLIED PHYSICS LETTERS, 2007, 91 (04)
[6] Electrical properties of GaN (Fe) buffers for AlGaN/GaN high electron mobility transistor structures
Polyakov, A. Y.
Smirnov, N. B.
Govorkov, A. V.
Yugova, T. G.
Markov, A. V.
Dabiran, A. M.
Wowchak, A. M.
Cui, B.
Xie, J.
Osinsky, A. V.
Chow, P. P.
Pearton, S. J.
APPLIED PHYSICS LETTERS, 2008, 92 (04)
[7] Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection
Thapa, Resham
Alur, Siddharth
Kim, Kyusang
Tong, Fei
Sharma, Yogesh
Kim, Moonil
Ahyi, Claude
Dai, Jing
Hong, Jong Wook
Bozack, Michael
Williams, John
Son, Ahjeong
Dabiran, Amir
Park, Minseo
APPLIED PHYSICS LETTERS, 2012, 100 (23)
[8] AlGaN/GaN high electron mobility transistor structure design and effects on electrical properties
Piner, EL
Keogh, DM
Flynn, JS
Redwing, JM
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5 : art. no. - W4.4
[9] Study on electrical performance of AlGaN/GaN high electron mobility transistor based on cap layer design
Zhang, Tieying
Cui, Peng
Luo, Xin
Chen, Siheng
Wang, Liu
Dai, Jiacheng
Qi, Kaifa
Linewih, Handoko
Lin, Zhaojun
Xu, Xiangang
Han, Jisheng
SOLID-STATE ELECTRONICS, 2025, 224
[10] Surface Immobilizations of AlGaN/GaN High Electron Mobility Transistor Based Sensors
Chu, B. H.
Chang, C. Y.
Wang, Y. L.
Pearton, S. J.
Ren, F.
STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 52 (SOTAPOCS 52), 2010, 33 (13): : 3 - 22

← 1 2 3 4 5 →