StressrelaxationofSi/Si1-xGex/Sistructurepreparedbyionimplantationandsubsequentannealingprocess

被引:0
作者
XU Wentinga TU Hailinga CHANG Qingb and XIAO Qinghuab a General Research Institute for Nonferrous Metals Beijing China b GRINM Semiconductor Materials Co Ltd Beijing China [100088 ,100088 ]
机构
关键词
silicon wafers; stress; stress relaxation; ion implantation; annealing;
D O I
暂无
中图分类号
TG156.2 [退火];
学科分类号
080201 ; 080503 ;
摘要
The stress relaxation of 74Ge+-implanted (100) silicon wafers was investigated. The implantation energy as a function of Si/Si1-xGex/Si struc-ture fluence and two kinds of thermal annealing were reported. The stress and stress relaxation after thermal annealing were calculated on the basis of Raman analysis, and were compared with those obtained from the calculation of virgin Si.
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页码:270 / 273
页数:4
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