A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation

被引：3

作者：

孟祥提 ^{[1
]}

黄强 ^{[1
]}

马艳秀 ^{[1
]}

郑永男 ^{[2
]}

范平 ^{[2
]}

朱升云 ^{[2
]}

机构：

[1] Institute of Nuclear and New Energy Technology,Tsinghua University

[2] China Institute of Atomic Energy

来源：

中国物理C | 2008年 / 06期

基金：

中国国家自然科学基金;

关键词：

semiconductor technology; CMOS image sensor; proton irradiation; average brightness; TRIM simulation;

D O I：

暂无

中图分类号：

O572.341 [];

学科分类号：

070202 ;

摘要：

The 9 and 12 MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×109to 4×1010 cm-2and l×109to 2×1012 cm-2have been carried out respectively.The color pictures and dark output images are captured,and the average brightness of dark output images is calculated.The anti-irradiation fluence thresholds for 9 and 12 MeV protons are about 4×1010 and 2×1012 cm-2,respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.

引用

页码：442 / 445

页数：4

共 10 条

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