Fabrication of pentacene organic field-effect transistors with polyimide gate dielectric layer

被引：0
|
作者：
DONG Mao-jun1
机构：
来源：
Optoelectronics Letters | 2007年 / 06期
关键词：
cm; Fabrication of pentacene organic field-effect transistors with polyimide gate dielectric layer; OFET;
D O I：
暂无
中图分类号：
TN32 [半导体三极管（晶体管）];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
The organic field effect transistors had been fabricated using the pentacene by vacuum evaporation as the active layer, the polyimide by spin coating as insulator layer, and aluminum by vacuum evaporation as gate, source and drain electrodes respectively. The field-effect mobility of 0.079 cm2/V.s was tested at Vds=70 V, and on/off radio up to 1.7×104.
引用
收藏
页码：432 / 434
页数：3
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