Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors

被引：0

作者：

刘远

刘凯

陈荣盛

刘玉荣

恩云飞

李斌

方文啸

机构：

[1] Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Produce Reliability and Environmental Testing Research Institute

[2] School of Electronic and Information Engineering,South China University of Technology

来源：

Chinese Physics Letters | 2017年 / 01期

基金：

中国国家自然科学基金;

关键词：

Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors; SiO;

D O I：

暂无

中图分类号：

TN321.5 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises(LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease,while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated.Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.

引用

页码：138 / 141

页数：4