Ti/Al Based Ohmic Contact to As-Grown N-Polar GaN

被引：0

作者：

冯志红 ^{[1
]}

王现彬 ^{[1
,2
]}

王丽 ^{[3
]}

吕元杰 ^{[1
]}

房玉龙 ^{[1
]}

敦少博 ^{[1
]}

赵正平 ^{[1
,2
]}

机构：

[1] National Key Laboratory of Application Specific Integrated Circuit(ASIC),Hebei Semiconductor Research Institute

[2] School of Information Engineering,Hebei University of Technology

[3] Information Center of Science and Technology

来源：

Chinese Physics Letters | 2015年 / 08期

基金：

中国国家自然科学基金;

关键词：

GaN; Al; Ti/Al Based Ohmic Contact to As-Grown N-Polar GaN; As;

D O I：

暂无

中图分类号：

TQ133.51 [];

学科分类号：

0817 ;

摘要：

Ti/Al based Ohmic contacts to as-grown N-polar GaN are investigated by cross-section transmission electron microscopy and energy dispersive x-ray spectroscopy.Due to the higher oxygen background doping in the Npolar GaN,the Al metal in Ohmic stacks is found to react with background oxygen more easily,resulting in more AlO;.In addition,the formation of AlO;is affected by the Al layer thickness greatly.The AlO;combined with the presence of A1 N is detrimental to the Ohmic contacts for N-polar GaN compared with Ga-polar GaN.With the reduction of the Al layer thickness to some extent,less A1O;and A1 N are formed,and lower Ohmic contact resistance is obtained.The lowest contact resistivity p of 1.97×10;Ω·cm;is achieved with the Al layer thickness of 80 nm.

引用

页码：136 / 138

页数：3

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