Magnetoabsorption spectra of magnetoexciton transitions in GaAs/Ga0.7Al0.3As quantum wells

被引：0
|
作者：
米贤武 [1 ]
李德俊 [1 ]
孟凡斌 [1 ]
赵鹤平 [1 ]
机构：
[1] College of Physics Science and Information Engineering,Jishou University
来源：
Chinese Optics Letters | 2009年 / 7卷 / 04期
基金：
中国国家自然科学基金;
关键词：
GaAs; well; Magnetoabsorption spectra of magnetoexciton transitions in GaAs/Ga; As quantum wells; Al;
D O I：
暂无
中图分类号：
O471.1 [半导体量子理论];
学科分类号：
摘要：
The internal transitions and absorption spectra of confined magnetoexcitons in GaAs/GaAlAs quantumwells have been theoretically investigated under magnetic fields along the growth direction of thesemiconductor heterostructure.The magnetoexciton states are obtained within the effective-mass approximationby using a variational procedure.The trial exciton-envelope wavefunctions are described ashydrogeniclike polynomial functions.The internal transition energies are investigated by studying theallowed magnetoexcitonic transitions using terahertz radiation circularly polarized in the plane of thequantum well.The intraexcitonic magnetoabsorption coefficients are obtained for transitions from 1s-liketo 2p~±-like magnetoexciton states as functions of the applied magnetic field.
引用
收藏
页码：335 / 338
页数：4
相关论文
共 50 条
  • [1] Magnetoabsorption spectra of magnetoexciton transitions in GaAs/Ga0.7Al0.3As quantum wells
    Mi, Xianwu
    Li, Dejun
    Meng, Fanbin
    Zhao, Heping
    CHINESE OPTICS LETTERS, 2009, 7 (04) : 335 - 338
  • [2] Magnetoabsorption spectra of intraexcitonic transitions in GaAs-(Ga,Al)As semiconductor quantum wells
    Barticevic, Z., 1600, American Institute of Physics Inc. (92):
  • [3] Magnetoabsorption spectra of intraexcitonic transitions in GaAs-(Ga,Al)As semiconductor quantum wells
    Barticevic, Z
    Pacheco, M
    Duque, CA
    Oliveira, LE
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (03) : 1227 - 1231
  • [4] Magnetoexciton states in GaAs/Ga0.7Al0.3As double quantum wells:: The effects of well-width asymmetry -: art. no. 155316
    Ríos, CLB
    Porras-Montenegro, N
    PHYSICAL REVIEW B, 2003, 68 (15)
  • [5] SIZE DEPENDENCE OF THE THERMAL BROADENING OF THE EXCITON LINEWIDTH IN GAAS/GA0.7AL0.3AS SINGLE QUANTUM-WELLS
    QIANG, H
    POLLAK, FH
    TORRES, CMS
    LEITCH, W
    KEAN, AH
    STROSCIO, MA
    IAFRATE, GJ
    KIM, KW
    APPLIED PHYSICS LETTERS, 1992, 61 (12) : 1411 - 1413
  • [6] NEAR-SURFACE GAAS/GA0.7AL0.3AS QUANTUM-WELLS - INTERACTION WITH THE SURFACE-STATES
    MOISON, JM
    ELCESS, K
    HOUZAY, F
    MARZIN, JY
    GERARD, JM
    BARTHE, F
    BENSOUSSAN, M
    PHYSICAL REVIEW B, 1990, 41 (18) : 12945 - 12948
  • [7] BINDING-ENERGIES AND OSCILLATOR-STRENGTHS OF EXCITONS IN THIN GAAS/GA0.7AL0.3AS QUANTUM-WELLS
    VOLIOTIS, V
    GROUSSON, R
    LAVALLARD, P
    PLANEL, R
    PHYSICAL REVIEW B, 1995, 52 (15): : 10725 - 10728
  • [8] DISLOCATIONS IN INDENTED GA0.7AL0.3AS
    HASWELL, R
    CHARSLEY, P
    PHILOSOPHICAL MAGAZINE LETTERS, 1989, 59 (04) : 165 - 170
  • [9] Magnetoexciton transitions in GaAs-Ga1-xAlxAs quantum wells
    Barticevic, Z
    Pacheco, M
    Duque, CA
    Oliveira, LE
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (05) : 1021 - 1033
  • [10] Sulfur diffusion into GaAs/Ga0.7Al0.3As heterostructures for device applications
    H. Nishi
    Applied Physics A, 1998, 67 : 579 - 583
12345