Resonant tunneling through double-barrier structures on graphene

被引:0
|
作者
邓伟胤 [1 ]
朱瑞 [1 ]
肖运昌 [2 ]
邓文基 [1 ]
机构
[1] Department of Physics, South China University of Technology
[2] LQIT, ICMP and SPTE, South China Normal University
基金
中国国家自然科学基金; 中央高校基本科研业务费专项资金资助;
关键词
graphene; tight-binding approximation; resonant tunneling;
D O I
暂无
中图分类号
O413 [量子论];
学科分类号
070201 ;
摘要
Quantum resonant tunneling behaviors of double-barrier structures on graphene are investigated under the tightbinding approximation. The Klein tunneling and resonant tunneling are demonstrated for the quasiparticles with energy close to the Dirac points. The Klein tunneling vanishes by increasing the height of the potential barriers to more than 300 meV. The Dirac transport properties continuously change to the Schro¨dinger ones. It is found that the peaks of resonant tunneling approximate to the eigen-levels of graphene nanoribbons under appropriate boundary conditions. A comparison between the zigzag- and armchair-edge barriers is given.
引用
收藏
页码:378 / 382
页数:5
相关论文
共 50 条
  • [1] Resonant tunneling through double-barrier structures on graphene
    Deng Wei-Yin
    Zhu Rui
    Xiao Yun-Chang
    Deng Wen-Ji
    CHINESE PHYSICS B, 2014, 23 (01)
  • [2] Resonant tunneling in ZnSe/BeTe double-barrier structures
    Keim, M
    Lunz, U
    Fischer, F
    Waag, A
    Landwehr, G
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 806 - 809
  • [3] Spin-polarized resonant tunneling in double-barrier structures
    Gnanasekar, K
    Navaneethakrishnan, K
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 28 (03) : 328 - 332
  • [4] Resonant tunneling in double-barrier structures under transverse magnetic field
    Yan, Qiqi
    Chen, Jian
    Pan, Hui
    Xu, Huaizhe
    PHYSICA B-CONDENSED MATTER, 2011, 406 (23) : 4361 - 4365
  • [5] RESONANT TUNNELING IN A DOUBLE-BARRIER JOSEPHSON JUNCTION
    Shygorin, P.
    Venhryn, B.
    JOURNAL OF PHYSICAL STUDIES, 2020, 24 (04):
  • [6] Tunneling through a GaN/AlN-based double-barrier resonant tunneling heterostructure
    V. I. Egorkin
    E. A. Il’ichev
    M. N. Zhuravlev
    S. B. Burzin
    S. S. Shmelev
    Semiconductors, 2014, 48 : 1747 - 1750
  • [7] ON THE DEFINITION OF SEQUENTIAL TUNNELING IN A DOUBLE-BARRIER RESONANT TUNNELING STRUCTURE
    ZOHTA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (2A): : L177 - L179
  • [8] The resonant tunneling of holes through double-barrier structures with InAs QDs at the center of a GaAs quantum well
    E. N. Morozova
    O. N. Makarovskii
    V. A. Volkov
    Yu. V. Dubrovskii
    L. Turyanska
    E. E. Vdovin
    A. Patané
    L. Eaves
    M. Henini
    Semiconductors, 2005, 39 : 543 - 546
  • [9] The resonant condition of transmission in the graphene-based double-barrier structures
    Sakhnyuk, V. E.
    Shutovskyi, A. M.
    Fedosov, S. A.
    Zamuruyeva, O. V.
    LOW TEMPERATURE PHYSICS, 2022, 48 (10) : 806 - 810
  • [10] Resonant tunneling transmission characteristics and tunneling time in asymmetrical double-barrier structures with multiple prewells
    Hamaguchi, H
    Yamamoto, H
    Yamada, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (8A): : 5157 - 5165