Resonant tunneling through double-barrier structures on graphene

被引:0
作者
邓伟胤 [1 ]
朱瑞 [1 ]
肖运昌 [2 ]
邓文基 [1 ]
机构
[1] Department of Physics, South China University of Technology
[2] LQIT, ICMP and SPTE, South China Normal University
关键词
graphene; tight-binding approximation; resonant tunneling;
D O I
暂无
中图分类号
O413 [量子论];
学科分类号
070201 ;
摘要
Quantum resonant tunneling behaviors of double-barrier structures on graphene are investigated under the tightbinding approximation. The Klein tunneling and resonant tunneling are demonstrated for the quasiparticles with energy close to the Dirac points. The Klein tunneling vanishes by increasing the height of the potential barriers to more than 300 meV. The Dirac transport properties continuously change to the Schro¨dinger ones. It is found that the peaks of resonant tunneling approximate to the eigen-levels of graphene nanoribbons under appropriate boundary conditions. A comparison between the zigzag- and armchair-edge barriers is given.
引用
收藏
页码:378 / 382
页数:5
相关论文
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[1]  
Capacitance, admittance, and rectification properties of small conductors .2 M. Buttiker. J. Phys.:Condens, matter . 1993