Increasing substrate resistance to improve the turn-on uniformity of a high-voltage multi-finger GG-nLDMOS

被引：0
|
作者：
何川 [1 ]
蒋苓利 [1 ]
樊航 [1 ]
张波 [1 ]
机构：
[1] State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology
来源：
Journal of Semiconductors | 2013年 / 01期
关键词：
ESD; multi-finger; GGLDMOS; turn-on uniformity;
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
With the impact of the non-uniform turn-on phenomenon,the ESD robustness of high-voltage multifinger devices is limited.This paper describes the operational mechanism of a GG-nLDMOS device under ESD stress conditions and analyzes the reason that causes the non-uniform turn-on characteristics of a multi-finger GGnLDMOS device.By means of increasing substrate resistance,an optimized device structure is proposed to improve the turn-on uniformity of a high-voltage multi-finger GG-nLDMOS.This approach has been successfully verified in a 0.35 m 40 V BCD process.The TLP test results reveal that increasing the substrate resistance can effectively enhance the turn-on uniformity of the 40 V multi-finger GG-nLDMOS device and improve its ESD robustness.
引用
收藏
页码：49 / 52
页数：4
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