Energy band design for p-type tensile strained Si/SiGe multi-quantum well infrared photodetector

被引：0
|
作者：
李金涛 [1 ]
陈松岩 [1 ]
亓东锋 [1 ]
黄巍 [1 ]
李成 [1 ]
赖虹凯 [1 ]
机构：
[1] School of Physics,Mechanical & Electrical Engineering,Xiamen University
来源：
OptoelectronicsLetters | 2011年 / 7卷 / 03期
基金：
中国国家自然科学基金;
关键词：
SiGe; QWIP; Energy band design for p-type tensile strained Si/SiGe multi-quantum well infrared photodetector; well; type;
D O I：
暂无
中图分类号：
TN215 [红外探测、红外探测器];
学科分类号：
摘要：
The band structure of the confined states is calculated for Si/SiGe multi-quantum well infrared photodetector(M-QWIP).The influence of the Ge component in pseudosubstrate on the energy band structure of Si/Si0.54Ge0.46 multi-quantum wells(MQWs) is investigated.It is found that the high energy levels in the MQWs move up while the low energy levels move down as the Ge component in pseudosubstrate increases.The influence of the barrier width on the energy band structure of MQWs is also studied based on the 6 × 6 k.p method.The results show that the Si barrier between 5 nm and 10 nm is optimized to enhance the intersubband absorption in the MQWs.
引用
收藏
页码：175 / 177
页数：3
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