Energy band design for p-type tensile strained Si/SiGe multi-quantum well infrared photodetector

被引：0
|
作者：
李金涛 [1 ]
陈松岩 [1 ]
亓东锋 [1 ]
黄巍 [1 ]
李成 [1 ]
赖虹凯 [1 ]
机构：
[1] School of Physics,Mechanical & Electrical Engineering,Xiamen University
来源：
OptoelectronicsLetters | 2011年 / 7卷 / 03期
基金：
中国国家自然科学基金;
关键词：
SiGe; QWIP; Energy band design for p-type tensile strained Si/SiGe multi-quantum well infrared photodetector; well; type;
D O I：
暂无
中图分类号：
TN215 [红外探测、红外探测器];
学科分类号：
摘要：
The band structure of the confined states is calculated for Si/SiGe multi-quantum well infrared photodetector(M-QWIP).The influence of the Ge component in pseudosubstrate on the energy band structure of Si/Si0.54Ge0.46 multi-quantum wells(MQWs) is investigated.It is found that the high energy levels in the MQWs move up while the low energy levels move down as the Ge component in pseudosubstrate increases.The influence of the barrier width on the energy band structure of MQWs is also studied based on the 6 × 6 k.p method.The results show that the Si barrier between 5 nm and 10 nm is optimized to enhance the intersubband absorption in the MQWs.
引用
收藏
页码：175 / 177
页数：3
相关论文
共 50 条
  • [1] Energy band design for p-type tensile strained Si/SiGe multi-quantum well infrared photodetector
    Li J.-T.
    Chen S.-Y.
    Qi D.-F.
    Huang W.
    Li C.
    Lai H.-K.
    Optoelectronics Letters, 2011, 7 (03) : 175 - 177
  • [2] Energy band design for p-type tensile strained Si/SiGe quantum well infrared photodetectors
    Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
    不详
    Pan Tao Ti Hsueh Pao, 2008, 4 (785-788):
  • [3] Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetector
    Jiang, Lin Gui
    Kai, Lai Hong
    Cheng, Li
    Yan, Chen Song
    Zhong, Yu Jin
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (03)
  • [4] ABSORPTION IN P-TYPE SI-SIGE STRAINED-QUANTUM-WELL STRUCTURES
    CORBIN, E
    WONG, KB
    JAROS, M
    PHYSICAL REVIEW B, 1994, 50 (04): : 2339 - 2345
  • [5] Design of monocrystalline Si/SiGe multi-quantum well microbolometer detector for infrared imaging systems
    Shafique, Atia
    Durmaz, Emre C.
    Cetindogan, Barbaros
    Yazici, Melik
    Kaynak, Mehmet
    Kaynak, Canan B.
    Gurbuz, Yasar
    INFRARED TECHNOLOGY AND APPLICATIONS XLII, 2016, 9819
  • [6] Infrared spectroscopy in p-type SiGe/Si quantum wells
    Berroir, JM
    Zanier, S
    Guldner, Y
    Vieren, JP
    Sagnes, I
    Campidelli, Y
    Badoz, PA
    APPLIED SURFACE SCIENCE, 1996, 102 : 331 - 335
  • [7] Noise characterization and device parameter extraction of a p-type strained layer quantum-well infrared photodetector
    Wang, DC
    Bosman, G
    Li, SS
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (03) : 1486 - 1490
  • [8] Characterization of SiGe/Si multi-quantum wells for infrared sensing
    Moeen, M.
    Salemi, A.
    Kolahdouz, M.
    Ostling, M.
    Radamson, H. H.
    APPLIED PHYSICS LETTERS, 2013, 103 (25)
  • [9] Asymmetric Multi-Quantum Well Infrared Photodetector with a Bound State in the Continuum
    Penello, G. M.
    Ravikumar, A. P.
    Sivco, D. L.
    Gmachl, C.
    2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2014,
  • [10] Strained p-type InGaAs/AlGaAs multiple quantum well infrared photodetectors
    Zhang, DH
    Sun, L
    Shi, W
    Yoon, SF
    Li, N
    Yuan, Z
    Chu, JH
    ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING, 2002, 4919 : 321 - 327
12345